Method of manufacturing thin film transistor, thin film transistor manufactured by the method, and display device employing the same

Original document(25 pages) 中文版

A method of manufacturing a thin film transistor is capable of enhancing pattern precision of an organic semiconductor layer and simplifying a patterning process. The method includes forming an organic insulating film on a substrate and forming a bank having the first and second concave portions and a third concave portion in the organic insulating film, the third concave portion being formed on the first and second concave portions. The method further includes forming a source electrode and a drain electrode in the first and second concave portions and forming an active layer in the third concave portion, the active layer contacting the source electrode and the drain electrode.

Application Number 申请号	200610056757	Application Date 申请日	2006.03.06
Title 名称	Method of manufacturing thin film transistor, thin film transistor manufactured by the method, and display device employing the same
Publication Number 公开号	1832220	Publication Date 公开日	2006.09.13
Approval Pub. Date		Granted Pub. Date
International Classification 分类号	H01L51/05,H01L51/40,H01L29/786,H01L21/336,H01L27/32,H01L27/15
Applicant(s) Name 申请人	Samsung SDI Co., Ltd.
Address 地址
Inventor(s) Name 发明人	Suh Min-chul
Attorney & Agent 代理人	luo zhengyun song zhiqiang

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