The invention relates to the chiseling and the eroding method of the several crystal silicon bar, the process is showed below: (1) the chiseling and eroding process before the beginning chisel; (2) the beginning chisel; (3) the main chisel: (4) the exceeding chisel. The chiseling and eroding process of the beginning chisel acts before the multicrystal chiseling and the eroding and after the hard hiding film chiseling and eroding, the SF3 or NF3 is served as the reactive gas, or the one sort or the several sorts of CxHyFz, Cl2, O2, are choose. The eroding method can wipe off the polymer remain of the light glue on the surface of the silicon, the effect of the roughness degree is reduced. |