| Original document(22 pages) 中文版 |
In one embodiment, a semiconductor device is formed in a body of semiconductor material. The semiconductor device includes a counter-doped drain region spaced apart from a channel region. |
Application Number
申请号 |
200610075127 |
Application Date
申请日 |
2006.04.24 |
| Title 名称 |
Power semiconductor device having improved performance and method |
Publication Number
公开号 |
1855543 |
Publication Date
公开日 |
2006.11.01 |
| Approval Pub. Date |
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Granted Pub. Date |
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| International Classification 分类号 |
H01L29/78,H01L21/336 |
Applicant(s) Name
申请人 |
Semiconductor Components Ind. |
| Address 地址 |
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| Inventor(s) Name 发明人 |
Loechelt Gary H. |
| Attorney & Agent 代理人 |
wang yonggang |
| More information 更 多 信 息 |
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