| Original document(39 pages) 中文版 |
A semiconductor memory device manufacturing method includes forming a floating gate electrode above a semiconductor substrate, forming an interelectrode insulating film above the floating gate electrode, forming a first radical nitride film on a surface of the interelectrode insulating film by first radical nitriding, and forming a control gate electrode on the first radical nitride film. |
Application Number
申请号 |
200510132970 |
Application Date
申请日 |
2005.12.29 |
| Title 名称 |
Semiconductor memory device and method of manufacturing the same |
Publication Number
公开号 |
1855548 |
Publication Date
公开日 |
2006.11.01 |
| Approval Pub. Date |
|
Granted Pub. Date |
|
| International Classification 分类号 |
H01L29/788,H01L27/105,H01L21/336,H01L21/28,H01L21/8239 |
Applicant(s) Name
申请人 |
Tokyo Shibaura Electric Co. |
| Address 地址 |
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| Inventor(s) Name 发明人 |
Ozawa Yoshio, Kamioka Isao |
| Attorney & Agent 代理人 |
li zheng chen haigong |
| More information 更 多 信 息 |
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