| Original document(16 pages) 中文版 |
In a thin-film field-effect transistor having a metal/insulator/semiconductor (MIS) structure, the semiconductor layer is formed of an organic compound, and the insulator layer is formed of an organic compound which is soluble in an organic solvent and exhibits spontaneous polarization similar to ferroelectric material. The transistor exhibits n-type transistor characteristics when polling is conducted by applying a voltage which is not less than a coercive electric field and not more than a withstand voltage between source and gate electrodes, the transistor exhibits p-type transistor characteristics when polling is absent. |
Application Number
申请号 |
200610074140 |
Application Date
申请日 |
2006.03.24 |
| Title 名称 |
Ambipolar organic thin-film field-effect transistor and making method |
Publication Number
公开号 |
1855572 |
Publication Date
公开日 |
2006.11.01 |
| Approval Pub. Date |
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Granted Pub. Date |
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| International Classification 分类号 |
H01L51/05,H01L51/40 |
Applicant(s) Name
申请人 |
Shinetsu Chemical Co. |
| Address 地址 |
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| Inventor(s) Name 发明人 |
Kawai Tomoji, Taniguchi Masateru, Mizuno Eriko |
| Attorney & Agent 代理人 |
du rixin |
| More information 更 多 信 息 |
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