Original document(23 pages)  中文版
    A cell arrangement comprising a memory cell arranged in parallel to a first capacitor is charged to a first voltage potential. A second capacitor is charged to a second voltage potential, which is higher than the first voltage potential. The second capacitor is connected to the cell arrangement while the voltage over the cell arrangement comprising the first capacitor is kept constant. The resulting current from the second capacitor through the memory cell is used to detect the state of the memory cell.
Application Number
申请号
200610100190 Application Date
申请日
2006.06.30
Title 名称 Method and apparatus for sensing a state of a memory cell
Publication Number
公开号
1909113 Publication Date
公开日
2007.02.07
Approval Pub. Date Granted Pub. Date
International Classification 分类号 G11C16/34;G11C16/06
Applicant(s) Name
申请人
Infineon Technologies Flash Gm
Address 地址
Inventor(s) Name 发明人 Borromeo Carlo;Curatolo Giacomo;Srowik Rico
Attorney & Agent 代理人 zhang xuemei liang yong
More information 更  多  信  息


 Related patents information
Google
Note:All patent data come from State Intellectual Property Office of the People's Republic of China. If there were discrepancies between here and the State Intellectual Property office, the later is more accurate. The patent data is only for public exchange and learning purposes. We are not responsible for the adverse consequences with unverified use of the data.