| Original document(25 pages) 中文版 |
The invention is to achieve stable emission of electrons and a high output of electrons even with impression at low voltage. The electron emission device includes a first electrode; a semiconductor barrier that has a first face disposed to face the first electrode and a second face which is opposite face of the first face, and is formed with a wide bandgap semiconductor; an insulating material that forms a space sealed between the first electrode and the semiconductor barrier; an inert gas that is encapsulated in the space; a second electrode that is disposed to face a second face of the semiconductor barrier interposing vacuum therebetween; a first voltage applying unit that applies a voltage between the first electrode and the semiconductor barrier; and a second voltage applying unit that applies a voltage between the semiconductor barrier and the second electrode. |
Application Number
申请号 |
200610108357 |
Application Date
申请日 |
2006.08.02 |
| Title 名称 |
Electron emission device |
Publication Number
公开号 |
1909142 |
Publication Date
公开日 |
2007.02.07 |
| Approval Pub. Date |
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Granted Pub. Date |
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| International Classification 分类号 |
H01J1/00;H01J1/30;H01J1/34 |
Applicant(s) Name
申请人 |
Tokyo Shibaura Electric Co. |
| Address 地址 |
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| Inventor(s) Name 发明人 |
Sakai Tadashi;Ono Tomio;Sakuma Naoshi;Yoshida Hiroaki;Suzuki Mariko |
| Attorney & Agent 代理人 |
li zheng yu jing |
| More information 更 多 信 息 |
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