Original document(18 pages)  中文版
    The invention relates to a plasma processor, which comprises one chamber containing at least two processing platforms, wherein said platforms are separated by separate wall; the separate wall has at least one channel whose width is 1/3 of length. The invention can confirm pressure uniformity between platforms and avoid interference between particles.
Application Number
申请号		 200510028567 Application Date
申请日		 2005.08.05
Title 名称 Plasma processing device
Publication Number
公开号		 1909185 Publication Date
公开日		 2007.02.07
Approval Pub. Date Granted Pub. Date
International Classification 分类号 H01L21/00;H01L21/68
Applicant(s) Name
申请人		 Advanced Micro-Fabrication Equipment (Shanghai) Inc.
Address 地址
Inventor(s) Name 发明人 Qian Qing
Attorney & Agent 代理人 wang ji
More information 更  多  信  息


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