| Original document(69 pages) 中文版 |
It is an object of the present invention to provide a method for manufacturing a substrate having film patterns such as an insulating film, a semiconductor film, and a conductive film in simple processes. It is another object of the invention to provide a method for manufacturing a semiconductor device with high throughput and high yield at low cost. A method for manufacturing a semiconductor device including the steps of: forming a first film over a substrate; discharging a solution containing a mask material to the first film thereby forming a mask over the first film; patterning the first film with the use of the mask thereby forming low wettability regions and a high wettability region over the substrate; removing the mask; and discharging a solution containing a material of an insulating film, a semiconductor film, or a conductive film to the high wettability region provided between the low wettability regions thereby forming a pattern of the insulating film, the semiconductor film, or the conductive film. |
Application Number
申请号 |
200510091142 |
Application Date
申请日 |
2005.08.04 |
| Title 名称 |
Method for manufacturing semiconductor devices |
Publication Number
公开号 |
1909188 |
Publication Date
公开日 |
2007.02.07 |
| Approval Pub. Date |
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Granted Pub. Date |
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| International Classification 分类号 |
H01L21/02;H01L21/208;H01L21/288;H01L21/31;H01L21/3205;C23C26/00 |
Applicant(s) Name
申请人 |
Semiconductor Energy Lab |
| Address 地址 |
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| Inventor(s) Name 发明人 |
Morisue Masafumi;Fujii Itsuki |
| Attorney & Agent 代理人 |
xu xun |
| More information 更 多 信 息 |
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