Original document(26 pages)  中文版
    The inventin discloses methods of forming a dielectric layer of a MIM capacitor which can include forming a passivation layer on a dielectric layer of a MIM capacitor to separate the dielectric layer from direct contact with an overlying photo-resist pattern. Related capacitor structures are also disclosed.
Application Number
申请号		 200610128572 Application Date
申请日		 2006.08.10
Title 名称 Methods of forming metal-insulator-metal (mim) capacitors with passivation layers on dielectric layers and devices so formed
Publication Number
公开号		 1913103 Publication Date
公开日		 2007.02.14
Approval Pub. Date Granted Pub. Date
International Classification 分类号 H01L21/02;H01L21/768;H01L21/82;H01L21/8242;H01L27/00;H01L27/108;H01L23/522
Applicant(s) Name
申请人		 Samsung Electronics Co., Ltd.
Address 地址
Inventor(s) Name 发明人 Kim Jong-chae;Yi Duk-min;Jung Sang-il;Hong Jong-wook
Attorney & Agent 代理人 ma gaobeng yang wu
More information 更  多  信  息


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