The inventin provides a method of fabricating a nitride-based semiconductor device comprising: etching the back of a first semiconductor layer made of one of an n-type nitride-based semiconductor layer having a wurtzite structure and a nitride-based semiconductor substrate; and a process for forming an n-side electrode on the back of the first etched semiconductor layer, mounting the nitride-based semiconductor laser device by a connecting method. The invention also provides another method of fabricating a nitride-based semiconductor device comprsing etching the back of a first semiconductor layer made of one of an n-type nitride-based semiconductor layer having a wurtzite structure and a nitride-based semiconductor substrate; and a process for forming an n-side electrode on the back of the first etched semiconductor layer, a heat process between the n-side electrode and a heat-discharging platform. The method can reduce contact resistance between a nitrogen face of a nitride-based semiconductor substrate or the like and an electrode. |