Original document(11 pages)  中文版
    The invention relates to a process for producing doped semiconductor wafers from silicon, which contain an electrically active dopant, such as boron, phosphorus, arsenic or antimony, optionally are additionally doped with germanium and have a defined thermal conductivity, involves producing a single crystal from silicon and processing further to form semiconductor wafers, the thermal conductivity being established by selecting a concentration of the electrically active dopant and optionally a concentration of germanium. The invention also relates to semiconductor wafers produced from silicon by the process have specific properties with regard to thermal conductivity and resistivity.
Application Number
申请号		 200510091416 Application Date
申请日		 2005.08.10
Title 名称 Process for producing doped semiconductor wafers from silicon, and the wafers produced thereby
Publication Number
公开号		 1913107 Publication Date
公开日		 2007.02.14
Approval Pub. Date Granted Pub. Date
International Classification 分类号 H01L21/22;H01L21/24;C30B29/06
Applicant(s) Name
申请人		 Siltronic AG
Address 地址
Inventor(s) Name 发明人 Krautbauer Rupert;Frey Christoph;Zitzelsberger Simon;Lehmann Lothar
Attorney & Agent 代理人 guo xiaodong
More information 更  多  信  息


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