This invention provides a manufacturing method for polysilicon film transistor components with high pressure hydrosphere annealing including the following steps: first of all providing a base plate, forming a polysilicon film transistor on said plate and then forming an insulation layer covering said film transistor, after that, etching said insulation layer to form multiple contact windows then to carry out high pressure hydrosphere annealing to said transistor after covering the resistance water-oxygen layer on said multiple contact windows. |