This invention relates to a method for manufacturing film transistors, which first of all forms a non-crystalline silicon layer on a base plate, then transforming it to a polysilicon layer to be heat-processed to amend the lattice bug of the polysilicon layer, then ion-implantation is done to it, a grating insulation layer is formed on the base plate to cover the polysilicon layer, then a grid is formed on the grating insulation layer and the grid locates above the polysilicon layer, a source/drain is formed in the polysilicon layer under the two sides of the grid and the channel region is between said source/drain, a pattern dielectric layer is formed on the base plate and exposes part of the source/drain, source/drain metal is formed on the dielectric layer and is connected with the source/drain. |