The invention proposes a method for manufacturing a semiconductor element which has shallow, high-dopant concentration source/drain regions. The manufacturing method is provided that, a gate electrode is formed on a substrate, and the source/drain regions of the substrate are transformed into an amorphous state by implanting ions. A co-implantation process is performed to implant ions in the source/drain regions. Thereafter, one or more implants may be performed to form the LDD and source/drain regions and the substrate is recrystallized. The amorphous regions and the co-implantation regions effectively confine or reduce the diffusion of the ions used to form the LDD and source/drain regions. |