| Original document(31 pages) 中文版 |
The invention provides a method of forming an align key in a well structure formation process is provided. The method includes: providing a semiconductor substrate having an align key region and a first well region and forming a first ion implantation mask on the substrate. The first ion implantation mask has a groove exposing a portion of the align key region and covering the first well region. The method further includes etching the exposed align key region and the first ion implantation mask of the first well region to form a trench type align key in the align key region and a second ion implantation mask exposing the first well region, and implanting impurities into the first well region exposed by the second ion implantation mask to form a first well in the first well region. |
Application Number
申请号 |
200610138974 |
Application Date
申请日 |
2006.08.14 |
| Title 名称 |
Method of forming align key in well structure formation process and method of forming element isolation structure using the align key |
Publication Number
公开号 |
1913119 |
Publication Date
公开日 |
2007.02.14 |
| Approval Pub. Date |
|
Granted Pub. Date |
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| International Classification 分类号 |
H01L21/71;H01L21/76 |
Applicant(s) Name
申请人 |
Samsung Electronics Co., Ltd. |
| Address 地址 |
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| Inventor(s) Name 发明人 |
Jo Sung-il |
| Attorney & Agent 代理人 |
tao fengbei |
| More information 更 多 信 息 |
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