Original document(62 pages)  中文版
    The present invention provides a method of manufacturing a trench with a rounded corner portion and a broadened opening. Anisotropic oxidation is carried out using a halogen oxidation method using dichloroethylene (DCE) to form an anisotropic oxide film such that the film thickness in a shoulder portion of the trench is thick and gradually decreases nearer the bottom, the anisotropic oxide film is removed, and the shoulder portion of the trench is preferentially backed off, thereby rounding the shoulder portion sufficiently to broaden the opening. Then, an insulating member is embedded in the trench. The rounded portion of the shoulder portion of the trench and vicinity thereof is used as a channel of a MOS transistor.
Application Number
申请号		 200610107570 Application Date
申请日		 2006.07.26
Title 名称 Method of manufacturing a semiconductor device and the semiconductor device
Publication Number
公开号		 1913120 Publication Date
公开日		 2007.02.14
Approval Pub. Date Granted Pub. Date
International Classification 分类号 H01L21/76;H01L21/306;H01L21/316;H01L21/822;H01L27/04
Applicant(s) Name
申请人		 Elpida Memory Inc.
Address 地址
Inventor(s) Name 发明人 Yamamoto Hirohisa
Attorney & Agent 代理人 lu jinhua xie lina
More information 更  多  信  息


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