Original document(15 pages)  中文版
    The invention provides a method for fabricating a semiconductor structure in which a semiconductor substrate comprising an active region with an uncovered top side is provided, at least one STI trench adjoining the active region is formed, and an STI divot is formed in the insulating filling. The at least one STI trench comprises an insulating filling extending to above the top side of the active region and the divot adjoins the active region and uncovers an edge of the uncovered top side of the active region. A hydrogen termination of the uncovered top side of the active region is formed and a heat treatment in a hydrogen atmosphere is carried out in order to form a rounding from the edge of the active region in such a way that the top side of the active region continuously merges into the STI divot.
Application Number
申请号		 200610105832 Application Date
申请日		 2006.07.13
Title 名称 Manufacturing method of semiconductor structure and associated semiconductor structure
Publication Number
公开号		 1913121 Publication Date
公开日		 2007.02.14
Approval Pub. Date Granted Pub. Date
International Classification 分类号 H01L21/762;H01L21/336;H01L27/04;H01L29/78
Applicant(s) Name
申请人		 Infineon Technologies AG
Address 地址
Inventor(s) Name 发明人 Birner Albert;Weber Andreas;Weis Rolf
Attorney & Agent 代理人 zhu jingui
More information 更  多  信  息


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