Original document(18 pages)  中文版
    A method of fabricating a device includes depositing a electromigration (EM) resistive material in an etched trench formed in a substrate and a wiring layer. The EM resistive material is formed in electrical contact with an underlying diffusion barrier layer and wiring layer. The method further includes forming a via structure in electrical contact with the EM resistive material and the wiring layer. The method results in a structure which prevents an open circuit.
Application Number
申请号		 200610101503 Application Date
申请日		 2006.07.18
Title 名称 Via bottom contact and method of manufacturing same
Publication Number
公开号		 1913125 Publication Date
公开日		 2007.02.14
Approval Pub. Date Granted Pub. Date
International Classification 分类号 H01L21/768;H01L23/522
Applicant(s) Name
申请人		 IBM
Address 地址
Inventor(s) Name 发明人 Chanda Kaushik;Clevenger Lawrence A.;Cowley Andrew P.;Gill Jason P.;Li Baozhen;Yang Chih-chao
Attorney & Agent 代理人 yu jing liu ruidong
More information 更  多  信  息


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