The present invention relates to a semiconductor device having a structure to improve contact processing margin, and method of fabricating the same. The method for fabricating a semiconductor device includes: (a) selectively etching the first insulating layer and conductive layer of the semiconductor substrate to form a first insulating pattern, a first conductive pattern, and a second conductive pattern; (b) forming a spacer on sidewalls of the first insulating pattern, the first conductive pattern, and the second conductive pattern; (c) depositing the second insulating layer on the surface of the substrate which including the pattern, dry etching the second insulating layer with the photoresist pattern to form the seond insulating pattern; (d) reomving the photoresist pattern and forming the first and the second self-aligned metal silicides on the exposed substrate and the second conductive pattern; (e) depositing the third insulating layer on the surface of the substrate which including the pattern, selectively etching the third insulating layer to form the first and second contactors connecting the the first and the second self-aligned metal silicides layers; forming the second insulating layer of the step (c) to entirely expose the upper surface of the second conductive pattern, forming the second self-aligned metal silicides of the step (d) to entirely cover the upper surface of the second conductive pattern. |