This invention provides a manufacture technology for passing through isolation regions and PN junctions of semiconductor chips, first of all, corroding the double sides of a chip symmetrically with etching and chemical corrosion to make grooves in the region for making PN junction passing through isolation and diffusion, then passing through the isolation region to finish impurity diffusion with the base synchronously to finish passing through the isolation region and forming base a PN junction, which reduces the diffusion temperature and time. |