Original document(16 pages)  中文版
    In a semiconductor device, a pad metal has at least a portion located immediately under a probe region, and the portion is divided into a plurality of narrow metal layers each arranged in parallel with a traveling direction of a probe. Thus, it is possible to enhance surface flatness of the pad metal and to prevent a characteristic of a semiconductor device from deteriorating without complication in processing and increase in chip size.
Application Number
申请号
200610095646 Application Date
申请日
2006.06.22
Title 名称 Semiconductor device
Publication Number
公开号
1913140 Publication Date
公开日
2007.02.14
Approval Pub. Date Granted Pub. Date
International Classification 分类号 H01L23/485
Applicant(s) Name
申请人
Matsushita Electric Ind Co., Ltd.
Address 地址
Inventor(s) Name 发明人 Nagai Noriyuki;Sakashita Toshihiko
Attorney & Agent 代理人 shen zhaokun
More information 更  多  信  息


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