Original document(17 pages)  中文版
    A semiconductor device, including: a semiconductor layer; an electrode pad formed above the semiconductor layer; an insulating layer formed over the electrode pad and having an opening which exposes at least part of the electrode pad; and a bump formed at least in the opening. The bump includes: a first bump layer formed in the opening; an underlayer formed above the first bump layer and the insulating layer positioned around the first bump layer; and a second bump layer formed on the underlayer.
Application Number
申请号		 200610109552 Application Date
申请日		 2006.08.08
Title 名称 Semiconductor device and method of manufacturing the same
Publication Number
公开号		 1913141 Publication Date
公开日		 2007.02.14
Approval Pub. Date Granted Pub. Date
International Classification 分类号 H01L23/485;H01L21/60;H01L21/28
Applicant(s) Name
申请人		 Seiko Epson Corp.
Address 地址
Inventor(s) Name 发明人 Yuzawa Takeshi
Attorney & Agent 代理人 yu gang
More information 更  多  信  息


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