Original document(18 pages)  中文版
    A first reconstituted wafer is formed through following steps : A first gap filled by mould separate horizontally of the first group of chips, followed by a first redistribution layer. In parallel, a second reconstituted wafer is formed. The first redistribution layer is formed on first reconstituted wafer. before or after that, The second reconstituted wafer is formed in parallel and is diced along second gap such that individualized embedded chips are formed . Afterwards, a second redistribution layer is formed on the active surface of the embedded chips and tilted sidewalls.
Application Number
申请号		 200610092882 Application Date
申请日		 2006.05.11
Title 名称 Method of manufacturing a semiconductor device comprising stacked chips and a corresponding semiconductor device
Publication Number
公开号		 1913149 Publication Date
公开日		 2007.02.14
Approval Pub. Date Granted Pub. Date
International Classification 分类号 H01L25/00;H01L25/065;H01L23/488;H01L21/60
Applicant(s) Name
申请人		 Infineon Technologies AG
Address 地址
Inventor(s) Name 发明人 Meyer Thorsten;Hedler Harry
Attorney & Agent 代理人 wei jun
More information 更  多  信  息


 Related patents information
Google
Note:All patent data come from State Intellectual Property Office of the People's Republic of China. If there were discrepancies between here and the State Intellectual Property office, the later is more accurate. The patent data is only for public exchange and learning purposes. We are not responsible for the adverse consequences with unverified use of the data.