| Original document(17 pages) 中文版 |
Provided are an ESD protecting device and a method for fabricating the same. The ESD protecting device includes first and second device isolation layers, the first impurity region and the second impurity region both having a high concentration second conductivity type, high concentration impurity region having a first conductivity type and low concentration impurity region having a first conductivity type. First and second device isolation layers are formed in the field region of a semiconductor substrate having a first conductivity type.The first impurity region and the second impurity region both having a second conductivity type are formed on a semiconductor substrate having a first conductivity type. High concentration impurity region having a first conductivity type is formed on part of a first semiconductor substrate located at side of impurity region of the second high concentration having second conductivity type. Low concentration impurity region having a first conductivity type is formed on part of the semiconductor substrate located at lower of first high concentration impurity having second conductivity type. |
Application Number
申请号 |
200610111006 |
Application Date
申请日 |
2006.08.11 |
| Title 名称 |
Electro-static discharge protecting device and method for fabricating the same |
Publication Number
公开号 |
1913157 |
Publication Date
公开日 |
2007.02.14 |
| Approval Pub. Date |
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Granted Pub. Date |
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| International Classification 分类号 |
H01L27/04;H01L23/60;H01L21/822 |
Applicant(s) Name
申请人 |
Dongbu Electronics Co., Ltd. |
| Address 地址 |
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| Inventor(s) Name 发明人 |
Kim San H. |
| Attorney & Agent 代理人 |
lin yuqing xie lina |
| More information 更 多 信 息 |
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