The invention relates to semiconductor device and its production method. The semiconductor device 1 includes an insulating interlayer 10, interconnects 12 a to 12 c, an insulating interlayer 20, and a capacitor element 30. On the insulating interlayer 10 and the interconnects 12 a to 12 d, the insulating interlayer 20 is provided via a diffusion barrier 40. On the insulating interlayer 20, the capacitor element 30 is provided. The capacitor element 30 is a MIM type capacitor element, and includes a lower electrode 32 provided on the insulating interlayer 20, a capacitor insulating layer 34 provided on the lower electrode 32, and an upper electrode 36 provided on the capacitor insulating layer 34. The interface S 1 between the insulating interlayer 20 and the capacitor element 30 is generally flat. The lower face S 2 of the insulating interlayer 20 includes an uneven portion at a position corresponding to the capacitor insulating layer 34. |