Original document(14 pages)  中文版
    When using an element which incorporates two variable capacity diodes which shares the cathode in one package in an LC resonant circuit, a point which becomes H level in the DC analysis and a point which becomes H level in the AC analysis are different, and therefore a capacitor for cutting DC and a bias resistor having a high impedance are required, which hinders the reduction in substrate mounting area and hence hinders the reduction in cost of a set. A resistance having a high impedance is connected between anode terminals of two variable capacitance diodes sharing a cathode, and the components described above are sealed in one package. The resistance can be formed of a diffusion region between p-regions of the variable capacitance diodes or can be formed of polysilicon and disposed on a chip. Thus, the resistance can be mounted while a chip size of the variable capacitance diode is maintained. Accordingly, it is not required that a bias resistance having a high impedance is additionally provided, whereby achieving reduction in the substrate mounting area and reduction in costs of the set.
Application Number
申请号
200610105610 Application Date
申请日
2006.07.10
Title 名称 Variable capacitance diode
Publication Number
公开号
1913159 Publication Date
公开日
2007.02.14
Approval Pub. Date Granted Pub. Date
International Classification 分类号 H01L27/06
Applicant(s) Name
申请人
Sanyo Electric Co.
Address 地址
Inventor(s) Name 发明人 Ikeda Youichi
Attorney & Agent 代理人 shao yali li xiaoshu
More information 更  多  信  息


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