Original document(12 pages)  中文版
    A semiconductor device includes a semiconductor substrate having a cell region and a peripheral region. A cell array is defined within the cell region, the cell array having first, second, third, and fourth sides. A first decoder is defined within the peripheral region and provided adjacent to the first side of the cell array. A first isolation structure is formed at a first boundary region provided between the first side of the cell array and the peripheral region. A first dummy active region is formed at a second boundary region that is provided between the second side of the cell array and the peripheral region. The first isolation structure has a first portion that has a first depth and a second portion that has a second depth.
Application Number
申请号
200610108112 Application Date
申请日
2006.07.27
Title 名称 Flash memory device and method of fabricating the same
Publication Number
公开号
1913160 Publication Date
公开日
2007.02.14
Approval Pub. Date Granted Pub. Date
International Classification 分类号 H01L27/10;H01L21/822;H01L21/762
Applicant(s) Name
申请人
Hynix Semiconductor Inc.
Address 地址
Inventor(s) Name 发明人 Park Sung K.
Attorney & Agent 代理人 li xiaoshu wei xiaogang
More information 更  多  信  息


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