| Original document(27 pages) 中文版 |
A thin film transistor substrate and a method of manufacturing the same are provided. The thin film transistor substrate includes a first conductive type MOS transistor and a second conductive type MOS transistor. The first conductive type MOS transistor includes a first semiconductor layer formed on a blocking layer and having first conductive type low-concentration doping regions adjacent to both sides of a channel region, first conductive type source/drain regions adjacent to the first conductive type low-concentration doping regions, a first gate insulating layer formed on the first semiconductor layer, a second gate insulating layer formed on the first gate insulating layer and overlapping with the channel region and the low-concentration doping regions of the first semiconductor layer, and a first gate electrode formed on the second gate insulating layer. The second conductive type MOS transistor includes a second semiconductor layer formed on the blocking layer and having second conductive type source/drain regions adjacent to both sides of a channel region, the first gate insulating layer formed on the second semiconductor layer, a second gate insulating layer formed on the first gate insulating layer and overlapping with the second semiconductor layer, and a second gate electrode formed on the second gate insulating layer. |
Application Number
申请号 |
200610110142 |
Application Date
申请日 |
2006.08.07 |
| Title 名称 |
Thin film transistor substrate and method of manufacturing the same |
Publication Number
公开号 |
1913163 |
Publication Date
公开日 |
2007.02.14 |
| Approval Pub. Date |
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Granted Pub. Date |
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| International Classification 分类号 |
H01L27/12;H01L29/786;H01L21/84;H01L21/336 |
Applicant(s) Name
申请人 |
Samsung Electronics Co., Ltd. |
| Address 地址 |
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| Inventor(s) Name 发明人 |
Park Kyung-min;You Chun-gi |
| Attorney & Agent 代理人 |
rong zhimin |
| More information 更 多 信 息 |
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