Original document(11 pages)  中文版
    This invention relates to a layout structure of a mutual-compensated MOS image sensor including a base, multiple light sensing elements, multiple transistors and multiple colorful optical filtering films, in which, the base includes a pixel array region composed of multiple pixels, each pixel includes a light sensing region and an active element region, and the pixels are isolated by the isolation regions and the light sensing regions have different sizes, besides, multiple light sensing elements are defined in the light sensing regions, multiple transistors are matched in the active regions, multiple colorful filtering films are matched above the corresponding pixels to form a color filter array.
Application Number
申请号
200510089664 Application Date
申请日
2005.08.08
Title 名称 Distribution structure of complement metal oxide semiconductor image sensor
Publication Number
公开号
1913165 Publication Date
公开日
2007.02.14
Approval Pub. Date Granted Pub. Date
International Classification 分类号 H01L27/146
Applicant(s) Name
申请人
Lianhua Electronic Co., Ltd.
Address 地址
Inventor(s) Name 发明人 Wu Xinping;Lin Jiahui
Attorney & Agent 代理人 li xiaoshu wei xiaogang
More information 更  多  信  息


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