| Original document(25 pages) 中文版 |
The invention discloses CMOS image sensor and its production method. A CMOS image sensor cell includes a semiconductor active region of first conductivity type having a surface thereon and a P-N junction photodiode in the active region. A drive transistor is also provided in the semiconductor active region. The drive transistor has a gate electrode that is configured to receive charge generated in the P-N junction photodiode during an image capture operation (i.e., during capture of photons received from an image). This drive transistor has a gate electrode and a contoured channel region extending underneath the gate electrode. The contoured channel region has an effective channel length greater than a length of the gate electrode. |
Application Number
申请号 |
200610151336 |
Application Date
申请日 |
2006.08.09 |
| Title 名称 |
CMOS image sensor and method of manufacturing the same |
Publication Number
公开号 |
1913167 |
Publication Date
公开日 |
2007.02.14 |
| Approval Pub. Date |
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Granted Pub. Date |
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| International Classification 分类号 |
H01L27/146;H01L21/822 |
Applicant(s) Name
申请人 |
Samsung Electronics Co., Ltd. |
| Address 地址 |
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| Inventor(s) Name 发明人 |
Jung Jong-wan;Lee Duck-hyung |
| Attorney & Agent 代理人 |
tao fengbei |
| More information 更 多 信 息 |
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