Original document(17 pages)  中文版
    This invention relates to a method for protecting compound semiconductors from static discharge destruct and flip-chip semiconductor components with static protection ability containing a semiconductor part and a protection part, which is a LED component, said protection part is a CIC capacitor flip-chip base plate, in which, a capacitive structure is set between electrode pads of the CIC capacitor flip-chip base plate and the two electrodes of which are combined and parallel with those of the LED component electrically, when working at normal DC, almost an open-circuit state is shown between electrodes of the protection part, when static attacks, said protection part forms a discharge path for many voltages to realize static protection.
Application Number
申请号
200510090309 Application Date
申请日
2005.08.12
Title 名称 Compound semiconductor anti-static method and flip-chip semiconductor assembly with anti-static ability
Publication Number
公开号
1913168 Publication Date
公开日
2007.02.14
Approval Pub. Date Granted Pub. Date
International Classification 分类号 H01L27/15;H01L23/60
Applicant(s) Name
申请人
Nanyan Photoelectric Co., Ltd.
Address 地址
Inventor(s) Name 发明人 Zhang Lianbi;Hong Xiangjun;Zhang Qing'an;Su Chongzhi;Li Yulin;Fang Boren;Qiu Xianqin;Wang Ruiyu
Attorney & Agent 代理人 sun haochen
More information 更  多  信  息


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