Original document(17 pages)  中文版
    A nonvolatile memory device comprises a storage node comprising a lower electrode; a data storing layer (52) including a first region where a current path is formed at a first voltage and a second region where a current path is formed at a second voltage greater than the first voltage; and an upper electrode (68). Circuit path is formed under the second voltage higher than the first voltage. The first region contacts the upper electrode and lower electrode.
Application Number
申请号		 200610114928 Application Date
申请日		 2006.08.14
Title 名称 Nonvolatile semiconductor memory device and method of manufacturing the same
Publication Number
公开号		 1913169 Publication Date
公开日		 2007.02.14
Approval Pub. Date Granted Pub. Date
International Classification 分类号 H01L27/24;H01L21/82;H01L45/00
Applicant(s) Name
申请人		 Samsung Electronics Co., Ltd.
Address 地址
Inventor(s) Name 发明人 Ahn Seung Eon;Yun Jung Bin;Yoo In Kyeong;Kim Dong Chul;Kim Tae Hoon
Attorney & Agent 代理人 tao fengbei
More information 更  多  信  息


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