Original document(23 pages)  中文版
    Some embodiments of the present invention provide methods and apparatus for operating a transistor including at least one fully depleted channel region in and/or on a substrate. The methods include applying a reverse body bias to the substrate when turning on the transistor. The substrate may be a bulk wafer substrate. The reverse body bias may allow the transistor to turn on while preventing turn on of a parasitic transistor in the substrate.
Application Number
申请号		 200610106894 Application Date
申请日		 2006.08.09
Title 名称 Methods and apparatus for operating a transistor using a reverse body bias
Publication Number
公开号		 1913172 Publication Date
公开日		 2007.02.14
Approval Pub. Date Granted Pub. Date
International Classification 分类号 H01L29/772;H01L29/78
Applicant(s) Name
申请人		 Samsung Electronics Co., Ltd.
Address 地址
Inventor(s) Name 发明人 Yun Eun-jung;Lee Sung-young;Kim Sung-min;Park Dong-gun;Choi Dong-uk
Attorney & Agent 代理人 lin yuqing xie lina
More information 更  多  信  息


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