This invention relates to an AlGaN base resonance enhanced monocolor ultraviolet detector structure including: setting low and high temperature GaN materials with the thickness of 50-2000nm on a sapphire substrate, setting AlN/AlGaN multilayer structured distributed Bragg reflectors of 15-80nm and 15-100nm of 5-50 periods on the GaN material as the base lenses, setting a resonance cavity of n-AlxGal-xN/i-GaN/p-AlxGl-xN structure on the lenses, namely, setting high temperature absorption layers of n-AlzGal-xN and i-GaN of 20-80nm and 5-30nm thick and a resonator of 20-80nm thick and high temperature p-AlxGal-xN, Al composition and x is greater than or equal to 0.3, finally finishing RCE ultraviolet detector structure by a reflector, a top lens of AlN/AlGaN multi-layer structure distributed Bragg structure reflectors in the thickness of 15-89nm and 15-100nm from 0-30 periods. |