| Original document(14 pages) 中文版 |
The method includes steps: multiple component structures are formed on substrate provided in advance, and top parts of these structures are higher than surface of substrate; forming first dielectric layer and conductor layer on surface of substrate and surface of surfaces of these component structures in sequence; then, removing partial conductor layer on top parts of these structures and on sidewalls, and forming multiple first gap walls on uncovered sidewalls of component structures; removing uncovered conductor layer and first dielectric layer by using first gap walls as masks so as to expose substrate, and form multiple conductor gap walls; forming multiple second gap walls on sidewalls of conductor gap walls. |
Application Number
申请号 |
200510092046 |
Application Date
申请日 |
2005.08.16 |
| Title 名称 |
Method for fabricating openings of self aligned contact window, and semiconductor component |
Publication Number
公开号 |
1917147 |
Publication Date
公开日 |
2007.02.21 |
| Approval Pub. Date |
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Granted Pub. Date |
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| International Classification 分类号 |
H01L21/28;H01L21/768 |
Applicant(s) Name
申请人 |
Lijing Semiconductors Co., Ltd. |
| Address 地址 |
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| Inventor(s) Name 发明人 |
Wang Bingyao;Lai Liangquan;Yang Zhenghuan |
| Attorney & Agent 代理人 |
tao fengbei hou yu |
| More information 更 多 信 息 |
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