Original document(8 pages)  中文版
    This invention relates to new type of positive and negative symmetric sub wave length photon transistor thickness transparency strengthening structure, which comprises rectangle column photon thick film structure distributed by crossing line of two dimension with space proportion as1:1. The structure has the transparent effect higher than current film structure of two-dimensional distributed photon transistor.
Application Number
申请号		 200510029217 Application Date
申请日		 2005.08.30
Title 名称 Anion-cation symmetrical sub-wavelength photo crystal thick membrane reflection increasing structure
Publication Number
公开号		 1924642 Publication Date
公开日		 2007.03.07
Approval Pub. Date Granted Pub. Date
International Classification 分类号 G02F1/01;G02B1/10
Applicant(s) Name
申请人		 Shanghai Nanotechnology Promotion Center
Address 地址
Inventor(s) Name 发明人
Attorney & Agent 代理人
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