Original document(6 pages)  中文版
    The present invention is intermittent process for growing diamond film on silicon chip, and belongs to the technological field of chemically vapor depositing inorganic non-metal material. In an available thermal filament chemical vapor deposition plant, diamond film is grown in an intermittent circular process, in which hydrogen is introduced intermittently to etch diamond film so as to reduce the content of graphite in the film. The said process can make diamond film with excellent electric performance for making detector.
Application Number
申请号		 200610029238 Application Date
申请日		 2006.07.21
Title 名称 Method for growing diamond membrane in discontinuous cycling process
Publication Number
公开号		 1928166 Publication Date
公开日		 2007.03.14
Approval Pub. Date Granted Pub. Date
International Classification 分类号 C30B25/02;C30B29/04;C23C16/24
Applicant(s) Name
申请人		 Shanghai University
Address 地址
Inventor(s) Name 发明人
Attorney & Agent 代理人 guyong hua
More information 更  多  信  息


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