Original document(18 pages)  中文版
    The disclosed TFT array substrate comprises: from bottom to top, a glass substrate, a semiconductor layer, a grid insulation layer included two areas with the low and high dielectric constant respectively, a grid wire, and a public electrode wire opposite to the high dielectric constant area. This invention can increase capacity.
Application Number
申请号		 200510037214 Application Date
申请日		 2005.09.09
Title 名称 Thin-film transistor array substrate and its making method
Publication Number
公开号		 1928683 Publication Date
公开日		 2007.03.14
Approval Pub. Date Granted Pub. Date
International Classification 分类号 G02F1/1368;H01L21/18
Applicant(s) Name
申请人		 Qunkang Technology (Shenzhen) Co., Ltd.
Address 地址
Inventor(s) Name 发明人
Attorney & Agent 代理人
More information 更  多  信  息


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