The manufacture method for a quantum dot semiconductor nano material evanescent fiber amplifier comprises: using fused-cone fiber coupler as the amplification fiber, coating nano-level semiconductor material on outside of the coupling area; connecting the pumping light source and signal source with quantum dot semiconductor nano material evanescent amplification fiber. This invention has broad spectrum and small size, and can be used for the long-distance large-capacity high-speed communication system, the fiber CATV network, FTTH, etc. |