| Original document(15 pages) 中文版 |
A method relates to wafer straight bonding technology field and uses low temperature bonding technology to bond InP group stuff on Si surface. Remove one layer hydrophobic organic on surface of single polishing Si and InP wafers by organic solvent, remove impurity ion and carbon and surface rinsing dispose to them, then carry the pretreatment. Put the pretreatment wafers into one vacuum furnace system with temperature controller to adding temperature and pressure, then carry heating dispose with proper temperature and pressure to remove hydrosphere of bonding surface. Carry thinner dispose for bonding piece and heat treatment of removing left gas to surface without pressure to make heat treatment at higher temperature for enhance surface bonding ability. At last, carry InP underlay cauterization with bonding piece. It uses for micro-electronics and silicon-base photoelectron field. |
Application Number
申请号 |
200510086420 |
Application Date
申请日 |
2005.09.14 |
| Title 名称 |
Low-temperature chip direct bonding method |
Publication Number
公开号 |
1933096 |
Publication Date
公开日 |
2007.03.21 |
| Approval Pub. Date |
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Granted Pub. Date |
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| International Classification 分类号 |
H01L21/00 |
Applicant(s) Name
申请人 |
Inst. of Semiconductor, Chinese Academy of Sciences |
| Address 地址 |
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| Inventor(s) Name 发明人 |
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| Attorney & Agent 代理人 |
duancheng yun |
| More information 更 多 信 息 |
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