The invention is concerned with the mask and the mask using method that is used for continuous transverse crystallization technology. The mask includes: at least one transparent grid that includes two long borders, namely the front edge and the rear edge, the borders are parallel and same length, the front edge faces to the outer jut of the transparent grid, the rear edge faces to the inner hollow of the transparent grid. The invention can be used to remove the un-symmetrical area effectively, avoid the problem of craftwork speed drop. By the increase of the craftwork speed, the invention can reduce the overlapping fusing area in order to prevent the polycrystalline silicon layer to absorb more laser energy, and reduces the possibility that the polycrystalline silicon layer breaks as the conglomerate-block effect. |