Original document(79 pages)  中文版
    A laser processing apparatus provides a heating chamber, a chamber for laser light irradiation and a robot arm, wherein a temperature of a substrate on which a silicon film to be irradiated with laser light is formed is heated to 450 to 750 DEG C. in the heating chamber followed by irradiating the silicon film with laser light so that a silicon film having a single crystal or a silicon film that can be regarded as the single crystal can be obtained.
Application Number
申请号		 200610101850 Application Date
申请日		 1995.07.28
Title 名称 Method for manufacturing semiconductor device
Publication Number
公开号		 1933099 Publication Date
公开日		 2007.03.21
Approval Pub. Date Granted Pub. Date
International Classification 分类号 H01L21/00;H01L21/20;H01L21/67
Applicant(s) Name
申请人		 Semiconductor Energy Lab
Address 地址
Inventor(s) Name 发明人
Attorney & Agent 代理人 zhangzhi cheng
More information 更  多  信  息


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