| Original document(13 pages) 中文版 |
The invention is concerned with the semiconductor manufacture method for preventing crystal-edge area-film flake, it is: forms a dielectric layer on the front of the base; forms a photoetch-resist layer covering on the front and part rear of the base; processes only the wash edge step for the rear of the base in order to remove the photoetch-resist layer on the rear of the base, and reserves the photoetch-resist layer located at the crystal-edge area. |
Application Number
申请号 |
200510103921 |
Application Date
申请日 |
2005.09.15 |
| Title 名称 |
Semiconductor producing method for preventing crystal border film layer from stripping and interconnection wire producing method |
Publication Number
公开号 |
1933103 |
Publication Date
公开日 |
2007.03.21 |
| Approval Pub. Date |
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Granted Pub. Date |
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| International Classification 分类号 |
H01L21/027;H01L21/768;G03F7/00 |
Applicant(s) Name
申请人 |
Lianhua Electronic Co., Ltd. |
| Address 地址 |
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| Inventor(s) Name 发明人 |
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| Attorney & Agent 代理人 |
taofeng bei houyu |
| More information 更 多 信 息 |
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