Original document(18 pages)  中文版
    A method for fabricating a semiconductor device includes providing a substrate, forming an amorphous silicon layer over the substrate, forming a heat retaining layer on the amorphous silicon layer, patterning the heat retaining layer, and irradiating the patterned heat retaining layer.
Application Number
申请号		 200610064873 Application Date
申请日		 2006.03.16
Title 名称 Method of semiconductor thin film crystallization and semiconductor device fabrication
Publication Number
公开号		 1933104 Publication Date
公开日		 2007.03.21
Approval Pub. Date Granted Pub. Date
International Classification 分类号 H01L21/20;H01L21/336
Applicant(s) Name
申请人		 Ind Tech Res Inst
Address 地址
Inventor(s) Name 发明人
Attorney & Agent 代理人 xuebeng
More information 更  多  信  息


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