| Original document(73 pages) 中文版 |
A method for fabricating a semiconductor light emitting element or a semiconductor element by growing a nitride based III-V compound semiconductor layer for forming a light emitting element structure or an element structure on a nitride based III-V compound semiconductor substrate where a plurality of second regions having a second mean dislocation density higher than a first mean dislocation density are arranged regularly in a first region of crystal having a first mean dislocation density, wherein an element region is defined on the nitride based III-V compound semiconductor substrate such that the second region is not included substantially or not included in a light emitting region or an active region. |
Application Number
申请号 |
200610159297 |
Application Date
申请日 |
2002.10.03 |
| Title 名称 |
Semiconductor device and method for manufacturing the same |
Publication Number
公开号 |
1933105 |
Publication Date
公开日 |
2007.03.21 |
| Approval Pub. Date |
|
Granted Pub. Date |
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| International Classification 分类号 |
H01L21/20;H01L33/00;H01L29/30;H01S5/323;C30B25/02;C30B29/40 |
Applicant(s) Name
申请人 |
Sony Corp. |
| Address 地址 |
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| Inventor(s) Name 发明人 |
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| Attorney & Agent 代理人 |
taofeng bei |
| More information 更 多 信 息 |
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