Original document(15 pages)  中文版
    The invention is concerned with the multi-step low-temperature interlayer manufacture method for forming multi-layer interlayer structure, it is: the original interlayer uses the high-producing energy low-film quality deposition method, the outer interlayer uses low-producing energy high-film quality deposition method, therefore forms the multi-layer interlayer, the original interlayer of the inner layer is loosen but high-producing energy, the outer interlayer is compact and can protect the inner layer. The invention can achieve reasonable energy production, and high-film quality is unified.
Application Number
申请号
200510029705 Application Date
申请日
2005.09.15
Title 名称 Multi-step low-temperature space wall producing method
Publication Number
公开号
1933107 Publication Date
公开日
2007.03.21
Approval Pub. Date Granted Pub. Date
International Classification 分类号 H01L21/31;H01L21/28;H01L21/336
Applicant(s) Name
申请人
Zhongxin International Integrated Circuit Manufacturing (Shanghai) Co., Ltd.
Address 地址
Inventor(s) Name 发明人
Attorney & Agent 代理人 louxian yang
More information 更  多  信  息


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