| Original document(8 pages) 中文版 |
The invention is concerned with producing field of the high efficiency power semiconductor parts thyristor, especially the method that the III group element diffuses twice to improve high efficiency thyristor interdiction volt-ampere characteristic. The method includes the following steps: exceeds granule, cleans silicon chip, and cleans quartz closed-pipe source bottle, one time diffusion, and two time diffusion. It is: the normal temperature interdiction improves obviously, the leaking current minishs compare with the gallium extension obviously, and the high temperature leaking current minishs compare with the boron aluminum extension obviously. The invention is that not only improves the surface density of the CMOS chip, but also makes the P+ impurity thickness in the CMOS chip become stable. |
Application Number
申请号 |
200610048001 |
Application Date
申请日 |
2006.10.13 |
| Title 名称 |
Method for III family elements two-time spreading and raising large power transistor blocking current-voltage characteristics |
Publication Number
公开号 |
1933110 |
Publication Date
公开日 |
2007.03.21 |
| Approval Pub. Date |
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Granted Pub. Date |
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| International Classification 分类号 |
H01L21/332;H01L21/22 |
Applicant(s) Name
申请人 |
Huachen Electric Device Co., Ltd., Anshan City |
| Address 地址 |
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| Inventor(s) Name 发明人 |
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| Attorney & Agent 代理人 |
zhangqun |
| More information 更 多 信 息 |
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