| Original document(11 pages) 中文版 |
A clearance wall manufacturing method: provides the base formed the element structure, the element structure includes the gird structure and the fountain pole / the leaking pole; forms the clearance wall material layer on the base in order to cover the base and the element structure; processes etch craft, moves part of the clearance wall material layer to form clearance wall of the grid structure side-wall; processes the plasma processing step to form the clearance wall protective layer on the surface of the base, the clearance wall and the element. |
Application Number
申请号 |
200510103863 |
Application Date
申请日 |
2005.09.16 |
| Title 名称 |
Method for producing space wall, cleaning method after etching thereof and semiconductor element |
Publication Number
公开号 |
1933111 |
Publication Date
公开日 |
2007.03.21 |
| Approval Pub. Date |
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Granted Pub. Date |
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| International Classification 分类号 |
H01L21/335;H01L21/3105;H01L29/772 |
Applicant(s) Name
申请人 |
Lianhua Electronic Co., Ltd. |
| Address 地址 |
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| Inventor(s) Name 发明人 |
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| Attorney & Agent 代理人 |
taofeng bei houyu |
| More information 更 多 信 息 |
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