The invention is concerned with the strain source-drain manufacture method using new hard mask, it is: uses boron to adulterate silica glass as the new hard mask, processes polycrystalline silicon grid to erode, the hard mask can protect polycrystalline silicon grid to avoid erode and extend of the silicon germanium on the polycrystalline silicon grid when the silica in the source / leaking area hollow erodes and the silicon germanium extends, the hard mask is easy to be remove and the remove process will not destroy the sidewall interlayer between the grid and the source / leaking, when processes the wetting remove by the mixture of the hydrofluoric acid and the sulfuric acid or the hydrofluoric acid and the vinyl alcohol. |